IXUN280N10

Obsolete

IXYS

MOSFET N-CH 100V 280A SOT-227B

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Obsolete

IXYS

MOSFET N-CH 100V 280A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXUN280N10

Current - Continuous Drain (Id) @ 25°C	280 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	440 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	18000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	770 W
Rds On (Max) @ Id, Vgs [Max]	5 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Technology	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXUN280N10	280 A	18000 pF	5 mOhm	SOT-227B	MOSFET (Metal Oxide)	SOT-227-4 miniBLOC	N-Channel	100 V	20 V	Chassis Mount	4 V	440 nC	10 V	770 W	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 280A (Tc) 770W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available