Specification	SSM3K35AMFV,L3F

Current - Continuous Drain (Id) (Ta)	250 mA
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Max)	0.34 nC
Input Capacitance (Ciss) (Max)	36 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Package Name	VESM
Power Dissipation (Max)	500 mW
Rds On (Max)	1.1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	1 V

SSM3K35AMFV Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-723(VESM)

Part	Operating Temperature	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Package Name	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Package / Case	Rds On (Max)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)
Toshiba Semiconductor and Storage SSM3K35AMFV,L3F	150 °C	1 V	250 mA	VESM	Surface Mount	20 V	MOSFET (Metal Oxide)	10 V	SOT-723	1.1 Ohm	500 mW	N-Channel	36 pF	0.34 nC

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