
BYV10EX-600PQ
ActiveWeEn Semiconductors
DIODE GEN PURP 600V 10A TO220FP

BYV10EX-600PQ
ActiveWeEn Semiconductors
DIODE GEN PURP 600V 10A TO220FP
Description
General part information
BYV10 Series
Diode 600 V 10A Through Hole TO-220FP
Technical Specifications
Parameters and characteristics for this part
| Specification | BYV10EX-600PQ |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | TO-220-2 Full Pack, Isolated Tab |
| Package Name | TO-220FP |
| Reverse Recovery Time (trr) | 50 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
Pricing
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