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ADRF5132BCPZN-R7

ADRF5132BCPZN-R7

Active
Analog Devices Inc./Maxim Integrated

HIGH POWER, 20 W PEAK, SILICON SPDT, REFLECTIVE SWITCH, 0.7 GHZ TO 5.0 GHZ

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ADRF5132BCPZN-R7

ADRF5132BCPZN-R7

Active
Analog Devices Inc./Maxim Integrated

HIGH POWER, 20 W PEAK, SILICON SPDT, REFLECTIVE SWITCH, 0.7 GHZ TO 5.0 GHZ

Find alt

Description

General part information

ADRF5132 Series

The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches.The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package.ApplicationsCellular/4G infrastructureWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement

Technical Specifications

Parameters and characteristics for this part

SpecificationADRF5132BCPZN-R7
CircuitSPDT
Frequency Range (Max)5 GHz
Frequency Range (Min)700 MHz
IIP362 dBm
Impedance50 Ohm
Insertion Loss0.9 dB
Isolation35 dB
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case16-WFQFN Exposed Pad, CSP
Package Length3 mm
Package Name16-LFCSP-WQ
Package Width3 mm
RF TypeGeneral Purpose
Test Frequency5 GHz
TopologyReflective
Voltage - Supply (Maximum)5.4 V
Voltage - Supply (Minimum)4.5 V

Pricing

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