IR4426S

Obsolete

EICEDRIVER™ 25 V LOW-SIDE DRIVER IC WITH TYPICAL 2.3 A SOURCE AND 3.3 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS.

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IR4426S

Obsolete

INFINEON

EICEDRIVER™ 25 V LOW-SIDE DRIVER IC WITH TYPICAL 2.3 A SOURCE AND 3.3 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS.

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR4426 Series

EiceDRIVER™ 25 V dual-channel low-sidegate driverIC with typical 2.3 A source and 3.3 A sink currents in 8-lead SOIC and PDIP package forMOSFETsandIGBTs. The proprietary latch immune CMOS technologies enable ruggedized mono-lithic construction. The logic inputs are compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

Technical Specifications

Parameters and characteristics for this part

Specification	IR4426S

Channel Type	Independent
Current - Peak Output (Sink)	3.3 A
Current - Peak Output (Source)	2.3 A
Driven Configuration	Low-Side
Fall Time (Typ)	10 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
Input Type	Inverting
Logic Voltage - VIH	2.7 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	15 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	6 V

IR4426 Series

Part	Gate Type	Channel Type	Fall Time (Typ)	Rise Time (Typ)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Number of Drivers	Package Length	Package Width	Driven Configuration	Current - Peak Output (Source)	Current - Peak Output (Sink)	Mounting Type	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Gate Channel	Input Type	Logic Voltage - VIL	Logic Voltage - VIH
INFINEON IR4426PBF	IGBT MOSFET N-Channel MOSFET	Independent	10 ns	15 ns	-40 °C	150 °C	8-DIP 8-PDIP	2	0.3 in	7.62 mm	Low-Side	2.3 A	3.3 A	Through Hole	20 V	6 V	N-Channel	Inverting	0.8 V	2.7 V
INFINEON IR4426S	IGBT MOSFET N-Channel MOSFET	Independent	10 ns	15 ns	-40 °C	150 °C	8-SOIC	2	0.154 in	3.9 mm	Low-Side	2.3 A	3.3 A	Surface Mount	20 V	6 V	N-Channel	Inverting	0.8 V	2.7 V
INFINEON IR4426SPBF	IGBT MOSFET N-Channel MOSFET	Independent	10 ns	15 ns	-40 °C	150 °C	8-SOIC	2	0.154 in	3.9 mm	Low-Side	2.3 A	3.3 A	Surface Mount	20 V	6 V	N-Channel	Inverting	0.8 V	2.7 V
INFINEON IR4426PBF	IGBT MOSFET N-Channel MOSFET	Independent	10 ns	15 ns	-40 °C	150 °C	8-DIP 8-PDIP	2	0.3 in	7.62 mm	Low-Side	2.3 A	3.3 A	Through Hole	20 V	6 V	N-Channel	Inverting	0.8 V	2.7 V
INFINEON IR4426SPPBF	IGBT MOSFET	Independent	10 ns	15 ns	-40 °C	125 °C	8-SOIC	2	0.154 in	3.9 mm	Low-Side	2.3 A	3.3 A	Surface Mount	20 V	6 V	N-Channel	Non-Inverting	0.8 V	2.7 V
INFINEON IR4426	IGBT MOSFET N-Channel MOSFET	Independent	10 ns	15 ns	-40 °C	150 °C	8-DIP 8-PDIP	2	0.3 in	7.62 mm	Low-Side	2.3 A	3.3 A	Through Hole	20 V	6 V	N-Channel	Inverting	0.8 V	2.7 V
INFINEON IR4426STRPBF	IGBT MOSFET N-Channel MOSFET	Independent	10 ns	15 ns	-40 °C	150 °C	8-SOIC	2	0.154 in	3.9 mm	Low-Side	2.3 A	3.3 A	Surface Mount	20 V	6 V	N-Channel	Inverting	0.8 V	2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR4426S | Datasheet