Specification	SIHW33N60E-GE3

Current - Continuous Drain (Id) (Tc)	33 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	150 nC
Input Capacitance (Ciss) (Max)	3508 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-3P-3 Full Pack
Package Name	TO-247AD
Power Dissipation (Max)	278 W
Rds On (Max)	99 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHW33 Series

Part	Drain to Source Voltage (Vdss)	Technology	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Package Name	Vgs(th) (Max)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SIHW33N60E-GE3	600 V	MOSFET (Metal Oxide)	TO-3P-3 Full Pack	30 V	278 W	10 V	150 nC	TO-247AD	4 V	N-Channel	Through Hole	3508 pF	99 mOhm	-55 °C	150 °C	33 A

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