IXFH26N55Q

Obsolete

LITTELFUSE

MOSFET N-CH 550V 26A TO247AD

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IXFH26N55Q

Obsolete

LITTELFUSE

MOSFET N-CH 550V 26A TO247AD

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFH26 Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH26N55Q

Current - Continuous Drain (Id) (Tc)	26 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	92 nC
Input Capacitance (Ciss) (Max)	3000 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AD (IXFH)
Power Dissipation (Max)	375 W
Rds On (Max)	230 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

IXFH26 Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Vgs (Max)	Package / Case	Vgs(th) (Max)	Package Name	Mounting Type
LITTELFUSE IXFH26N100X	860 W	-55 °C	150 °C	MOSFET (Metal Oxide)	113 nC	1000 V	10 V	N-Channel	3290 pF	26 A	320 mOhm	30 V	TO-247-3	6 V	TO-247	Through Hole
LITTELFUSE IXFH26N50P	400 W	-55 °C	150 °C	MOSFET (Metal Oxide)	60 nC	500 V	10 V	N-Channel	3600 pF	26 A	230 mOhm	30 V	TO-247-3	5.5 V	TO-247AD (IXFH)	Through Hole
LITTELFUSE IXFH26N50P	400 W	-55 °C	150 °C	MOSFET (Metal Oxide)	60 nC	500 V	10 V	N-Channel	3600 pF	26 A	230 mOhm	30 V	TO-247-3	5.5 V	TO-247AD (IXFH)	Through Hole
LITTELFUSE IXFH26N55Q	375 W	-55 °C	150 °C	MOSFET (Metal Oxide)	92 nC	550 V	10 V	N-Channel	3000 pF	26 A	230 mOhm	30 V	TO-247-3	4.5 V	TO-247AD (IXFH)	Through Hole
LITTELFUSE IXFH26N50P3	500 W	-55 °C	150 °C	MOSFET (Metal Oxide)	42 nC	500 V	10 V	N-Channel	2220 pF	26 A	230 mOhm	30 V	TO-247-3	5 V	TO-247AD (IXFH)	Through Hole
LITTELFUSE IXFH26N60P	460 W	-55 °C	150 °C	MOSFET (Metal Oxide)	72 nC	600 V	10 V	N-Channel	4150 pF	26 A	270 mOhm	30 V	TO-247-3	5 V	TO-247AD (IXFH)	Through Hole
LITTELFUSE IXFH26N60P	460 W	-55 °C	150 °C	MOSFET (Metal Oxide)	72 nC	600 V	10 V	N-Channel	4150 pF	26 A	270 mOhm	30 V	TO-247-3	5 V	TO-247AD (IXFH)	Through Hole
LITTELFUSE IXFH26N50P3	500 W	-55 °C	150 °C	MOSFET (Metal Oxide)	42 nC	500 V	10 V	N-Channel	2220 pF	26 A	230 mOhm	30 V	TO-247-3	5 V	TO-247AD (IXFH)	Through Hole
LITTELFUSE IXFH26N50Q	300 W	-55 °C	150 °C	MOSFET (Metal Oxide)	95 nC	500 V	10 V	N-Channel	3900 pF	26 A	200 mOhm	20 V	TO-247-3	4.5 V	TO-247AD (IXFH)	Through Hole
LITTELFUSE IXFH26N100X	860 W	-55 °C	150 °C	MOSFET (Metal Oxide)	113 nC	1000 V	10 V	N-Channel	3290 pF	26 A	320 mOhm	30 V	TO-247-3	6 V	TO-247	Through Hole

Pricing

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