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IPU80R3K3P7AKMA1

IPU80R3K3P7AKMA1

Obsolete
INFINEON

MOSFET N-CH 800V 1.9A TO251-3

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IPU80R3K3P7AKMA1

IPU80R3K3P7AKMA1

Obsolete
INFINEON

MOSFET N-CH 800V 1.9A TO251-3

Find alt

Description

General part information

CoolMOS P7 Series

N-Channel 800 V 1.9A (Tc) 18W (Tc) Through Hole PG-TO251-3

Technical Specifications

Parameters and characteristics for this part

SpecificationIPU80R3K3P7AKMA1
Current - Continuous Drain (Id) (Tc)1.9 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)5.8 nC
Input Capacitance (Ciss) (Max)120 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NamePG-TO251-3
Power Dissipation (Max)18 W
Rds On (Max)3.3 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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