Specification	SI1072X-T1-E3

Current - Continuous Drain (Id) (Ta)	1.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	8.3 nC
Input Capacitance (Ciss) (Max)	280 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SC-89 (SOT-563F)
Power Dissipation (Max)	236 mW
Rds On (Max)	93 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI1072 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Package / Case	Rds On (Max)	Mounting Type	Vgs (Max)	Vgs(th) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Package Name
Vishay Dale SI1072X-T1-E3	-55 °C	150 °C	N-Channel	SOT-563 SOT-666	93 mOhm	Surface Mount	20 V	3 V	8.3 nC	236 mW	280 pF	30 V	1.3 A	10 V	4.5 V	MOSFET (Metal Oxide)	SC-89 (SOT-563F)

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