Specification	SI4340DY-T1-E3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Maximum)	9.9 A
Current - Continuous Drain (Id) (Typical)	7.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	15 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	14-SOIC
Package Width	3.9 mm
Power - Max (Value 1)	1.14 W
Power - Max (Value 2)	1.43 W
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V

SI4340 Series

Part	Rds On (Max)	Vgs(th) (Max)	Power - Max (Value 1)	Power - Max (Value 2)	Mounting Type	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Package Name	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Gate Charge (Max)	Technology	Package Width	Package Length	Channel Count	Configuration	Configuration - Features	Input Capacitance (Ciss) (Max)
Vishay Dale SI4340DY-T1-E3	12 mOhm	2 V	1.14 W	1.43 W	Surface Mount	Logic Level Gate	-55 °C	150 °C	20 V	14-SOIC	7.3 A	9.9 A	15 nC	MOSFET (Metal Oxide)	3.9 mm	0.154 in	2	N-Channel	Dual
Vishay Dale SI4340CDY-T1-E3	9.4 mOhm	3 V	3 W	5.4 W	Surface Mount	Logic Level Gate	-55 °C	150 °C	20 V	14-SOIC	14.1 A	20 A		MOSFET (Metal Oxide)	3.9 mm	0.154 in	2	N-Channel	Dual	1300 pF

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