Specification	MCB60I1200TZ

Current - Continuous Drain (Id) (Tc)	90 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	160 nC
Input Capacitance (Ciss) (Max)	2790 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Package Name	TO-268AA (D3Pak-HV)
Rds On (Max)	34 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-5 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	4 V

MCB60I1200 Series

Part	Vgs (Max) Negative	Vgs (Max) Positive	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Max)	Operating Temperature (Min)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Input Capacitance (Ciss) (Max)	Package Name	Rds On (Max)	Package / Case	Mounting Type
LITTELFUSE MCB60I1200TZ	-5 V	20 V	4 V	160 nC	1200 V	90 A	175 °C	-40 °C	20 V	N-Channel	SiCFET (Silicon Carbide)	2790 pF	TO-268AA (D3Pak-HV)	34 mOhm	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available