Specification	SI4446DY-T1-E3

Current - Continuous Drain (Id) (Ta)	3.9 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.1 W
Rds On (Max)	40 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.6 V

SI4446 Series

Part	Power Dissipation (Max)	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Package Length	Package Name	Package Width	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Input Capacitance (Ciss) (Max)	FET Type	Mounting Type
Vishay Dale SI4446DY-T1-E3	1.1 W	12 nC	10 V	4.5 V	1.6 V	MOSFET (Metal Oxide)	-55 °C	150 °C	12 V	40 V	0.154 in	8-SOIC	3.9 mm	3.9 A	40 mOhm	700 pF	N-Channel	Surface Mount

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