Description
General part information
IKW30N60 Series
The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IKW30N60H3FKSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 165 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-1 |
| Power - Max | 187 W |
| Reverse Recovery Time (trr) | 38 ns |
| Switching Energy | 1.38 mJ |
| Td (off) @ 25°C | 207 ns |
| Td (on) @ 25°C | 21 ns |
| Test Condition Current | 30 A |
| Test Condition Resistance | 10.5 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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