Specification	SIRA84BDP-T1-GE3

Current - Continuous Drain (Id) (Ta)	22 A
Current - Continuous Drain (Id) (Tc)	70 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	1050 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	36 W, 3.7 W
Rds On (Max)	4.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SIRA84 Series

Part	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package / Case	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	FET Type	Package Name	Current - Continuous Drain (Id) (Ta)
Vishay Dale SIRA84DP-T1-GE3	2.4 V	30 V	MOSFET (Metal Oxide)	Surface Mount	60 A	4.6 mOhm	PowerPAK® SO-8	38 nC	1535 pF	-16 V	20 V	-55 °C	150 °C	10 V	4.5 V	34.7 W	N-Channel	PowerPAK® SO-8
Vishay Dale SIRA84BDP-T1-GE3	2.4 V	30 V	MOSFET (Metal Oxide)	Surface Mount	70 A	4.6 mOhm	PowerPAK® SO-8	32 nC	1050 pF	-16 V	20 V	-55 °C	150 °C	10 V	4.5 V	3.7 W 36 W	N-Channel	PowerPAK® SO-8	22 A

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