Specification	SI8499DB-T2-E1

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	1300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFBGA
Package Length	1.5 mm
Package Name	6-Micro Foot™
Package Width	1 mm
Power Dissipation (Max)	2.77 W, 13 W
Rds On (Max)	32 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.3 V

SI8499 Series

Part	Drain to Source Voltage (Vdss)	Package Name	Package Length	Package Width	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	FET Type	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Technology	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Package / Case	Vgs(th) (Max)	Vgs (Max)
Vishay Dale SI8499DB-T2-E1	20 V	6-Micro Foot™	1.5 mm	1 mm	32 mOhm	-55 °C	150 °C	1300 pF	P-Channel	2.77 W 13 W	4.5 V	1.8 V	Surface Mount	MOSFET (Metal Oxide)	16 A	30 nC	6-UFBGA	1.3 V	12 V

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