Specification	SI1051X-T1-GE3

Current - Continuous Drain (Id) (Ta)	1.2 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	9.45 nC
Input Capacitance (Ciss) (Max)	560 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SC-89 (SOT-563F)
Power Dissipation (Max)	236 mW
Rds On (Max)	122 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	1 V

SI1051 Series

Part	Technology	Package Name	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Vgs(th) (Max)	Mounting Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SI1051X-T1-GE3	MOSFET (Metal Oxide)	SC-89 (SOT-563F)	9.45 nC	-55 °C	150 °C	P-Channel	8 V	1.2 A	5 V	1 V	Surface Mount	122 mOhm	560 pF	236 mW	SOT-563 SOT-666	4.5 V	1.5 V

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