
1N3211R
ActiveGeneSiC Semiconductor
DIODE GEN PURP REV 300V 15A DO5

1N3211R
ActiveGeneSiC Semiconductor
DIODE GEN PURP REV 300V 15A DO5
Description
General part information
1N3211R Series
Diode 300 V 15A Chassis, Stud Mount DO-5
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N3211R |
|---|---|
| Current - Average Rectified (Io) | 15 A |
| Current - Reverse Leakage | 10 µA |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | Stud, DO-5, DO-203AB |
| Package Name | DO-5 |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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CAD
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Documents
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