PSMN2R9-100SSEJ
ObsoleteN-CHANNEL 100 V, 2.9 MOHM MOSFET WITH ENHANCED SOA IN LFPAK88
PSMN2R9-100SSEJ
ObsoleteN-CHANNEL 100 V, 2.9 MOHM MOSFET WITH ENHANCED SOA IN LFPAK88
Description
General part information
PSMN2R9-100SSE Series
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R9-100SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R9-100SSEJ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 210 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 188 nC |
| Input Capacitance (Ciss) (Max) | 13280 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-1235 |
| Package Name | LFPAK88 (SOT1235) |
| Power Dissipation (Max) | 341 W |
| Rds On (Max) | 2.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.6 V |
Pricing
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CAD
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Documents
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