Specification	SPP20N65C3HKSA1

Current - Continuous Drain (Id) (Tc)	20.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	114 nC, 114 nC
Input Capacitance (Ciss) (Max)	2400 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	PG-TO220-3-1
Power Dissipation (Max)	208 W
Rds On (Max)	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.9 V

SPP20N Series

Part	Vgs (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	FET Type	Power Dissipation (Max)
INFINEON SPP20N60C3HKSA1	20 V	2400 pF	114 nC 114 nC	Through Hole	600 V	MOSFET (Metal Oxide)	TO-220-3	10 V	-55 °C	150 °C	190 mOhm	PG-TO220-3-1	20.7 A	3.9 V	N-Channel	208 W
INFINEON SPP20N65C3HKSA1	20 V	2400 pF	114 nC 114 nC	Through Hole	650 V	MOSFET (Metal Oxide)	TO-220-3	10 V	-55 °C	150 °C	190 mOhm	PG-TO220-3-1	20.7 A	3.9 V	N-Channel	208 W

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