Specification	SI3410DV-T1-GE3

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	33 nC
Input Capacitance (Ciss) (Max)	1295 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	2 W, 4.1 W
Rds On (Max)	19.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI3 Series

Part	FET Type	Gate Charge (Max)	Power Dissipation (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Package Name	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	FET Feature	Current - Continuous Drain (Id)	Power - Max	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)
Vishay Dale SI3127DV-T1-GE3	P-Channel	30 nC	2 W 4.2 W	Surface Mount	10 V	4.5 V	3 V	833 pF 833 pF	SOT-23-6 Thin TSOT-23-6	20 V	60 V	MOSFET (Metal Oxide)	6-TSOP	89 mOhm	3.5 A	13 A	-55 °C	150 °C
Vishay Dale SI3410DV-T1-GE3	N-Channel	33 nC	2 W 4.1 W	Surface Mount	10 V	4.5 V	3 V	1295 pF	SOT-23-6 Thin TSOT-23-6	20 V	30 V	MOSFET (Metal Oxide)	6-TSOP	19.5 mOhm		8 A	-55 °C	150 °C
Vishay Dale SI3438DV-T1-E3	N-Channel	20 nC	2 W 3.5 W	Surface Mount	10 V	4.5 V	3 V	640 pF	SOT-23-6 Thin TSOT-23-6	20 V	40 V	MOSFET (Metal Oxide)	6-TSOP	35.5 mOhm		7.4 A	-55 °C	150 °C
Vishay Dale SI3951DV-T1-GE3		5.1 nC		Surface Mount			1.5 V	250 pF	SOT-23-6 Thin TSOT-23-6		20 V	MOSFET (Metal Oxide)	6-TSOP	115 mOhm			-55 °C	150 °C	Logic Level Gate	2.7 A	2 VA	2	P-Channel	Dual
Vishay Dale SI3424CDV-T1-GE3	N-Channel	12.5 nC	3.6 W	Surface Mount	10 V	4.5 V	2.5 V	405 pF	SOT-23-6 Thin TSOT-23-6	20 V	30 V	MOSFET (Metal Oxide)	6-TSOP	26 mOhm		8 A	-55 °C	150 °C
Vishay Dale SI3590DV-T1-GE3		4.5 nC		Surface Mount			1.5 V		SOT-23-6 Thin TSOT-23-6		30 V	MOSFET (Metal Oxide)	6-TSOP	77 mOhm			-55 °C	150 °C	Logic Level Gate		830 mW		N P-Channel		2.5 A	1.7 A
Vishay Dale SI3458BDV-T1-E3	N-Channel	11 nC	2 W 3.3 W	Surface Mount	10 V	4.5 V	3 V	350 pF	SOT-23-6 Thin TSOT-23-6	20 V	60 V	MOSFET (Metal Oxide)	6-TSOP	0.1 Ohm		4.1 A	-55 °C	150 °C
Vishay Dale SI3456DDV-T1-E3	N-Channel	9 nC	1.7 W 2.7 W	Surface Mount	10 V	4.5 V	3 V	325 pF	SOT-23-6 Thin TSOT-23-6	20 V	30 V	MOSFET (Metal Oxide)	6-TSOP	40 mOhm		6.3 A	-55 °C	150 °C
Vishay Dale SI3473CDV-T1-E3	P-Channel	65 nC	4.2 W	Surface Mount	4.5 V	1.8 V	1 V	2010 pF	SOT-23-6 Thin TSOT-23-6	8 V	12 V	MOSFET (Metal Oxide)	6-TSOP	22 mOhm		8 A	-55 °C	150 °C
Vishay Dale SI3459BDV-T1-GE3	P-Channel	12 nC	2 W 3.3 W	Surface Mount	10 V	4.5 V	3 V	350 pF	SOT-23-6 Thin TSOT-23-6	20 V	60 V	MOSFET (Metal Oxide)	6-TSOP	216 mOhm		2.9 A	-55 °C	150 °C

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SI3410DV-T1-GE3 | Datasheet

Technical Data Sheet EN

Product Change Notice EN