Specification	G3R75MT12J-TR

Current - Continuous Drain (Id) (Tc)	38 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	47 nC
Input Capacitance (Ciss) (Max)	1545 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	TO-263-7, D2PAK
Power Dissipation (Max)	196 W
Rds On (Max)	85 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	22 V
Vgs(th) (Max)	2.7 V

G3R Series

Part	Vgs(th) (Max)	Mounting Type	Technology	Input Capacitance (Ciss) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package Name	Package Leads	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs (Max) Positive	Vgs (Max) Negative	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
GeneSiC Semiconductor G3R160MT12J-TR	2.7 V	Surface Mount	SiCFET (Silicon Carbide)	724 pF	N-Channel	19 A	1200 V	110 W	D2PAK TO-263-7	7 Leads	23 nC	-55 °C	175 °C	180 mOhm	22 V	-10 V	18 V	15 V
GeneSiC Semiconductor G3R160MT12J-TR	2.7 V	Surface Mount	SiCFET (Silicon Carbide)	724 pF	N-Channel	19 A	1200 V	110 W	D2PAK TO-263-7	7 Leads	23 nC	-55 °C	175 °C	180 mOhm	22 V	-10 V	18 V	15 V
GeneSiC Semiconductor G3R75MT12J-TR	2.7 V	Surface Mount	SiCFET (Silicon Carbide)	1545 pF	N-Channel	38 A	1200 V	196 W	D2PAK TO-263-7	7 Leads	47 nC	-55 °C	175 °C	85 mOhm	22 V	-10 V	18 V	15 V
GeneSiC Semiconductor G3R75MT12J-TR	2.7 V	Surface Mount	SiCFET (Silicon Carbide)	1545 pF	N-Channel	38 A	1200 V	196 W	D2PAK TO-263-7	7 Leads	47 nC	-55 °C	175 °C	85 mOhm	22 V	-10 V	18 V	15 V

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