Specification	IXTK21N100

Current - Continuous Drain (Id) (Tc)	21 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	250 nC
Input Capacitance (Ciss) (Max)	8400 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-264-3, TO-264AA
Package Name	TO-264 (IXTK)
Power Dissipation (Max)	500 W
Rds On (Max)	550 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXTK21 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Rds On (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package Name	Mounting Type	Power Dissipation (Max)
LITTELFUSE IXTK21N100	10 V	N-Channel	MOSFET (Metal Oxide)	1000 V	20 V	4.5 V	21 A	250 nC	550 mOhm	TO-264-3 TO-264AA	-55 °C	150 °C	8400 pF	TO-264 (IXTK)	Through Hole	500 W

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