Specification	IPP10N03LB G

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	1639 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	PG-TO220-3-1
Power Dissipation (Max)	58 W
Rds On (Max)	9.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

IPP10N Series

Part	Technology	Package / Case	Vgs (Max)	Package Name	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Gate Charge (Max)
INFINEON IPP10N03LB G	MOSFET (Metal Oxide)	TO-220-3	20 V	PG-TO220-3-1	30 V	N-Channel	Through Hole	-55 °C	175 °C	10 V	4.5 V	2 V	58 W	50 A	1639 pF	9.9 mOhm	13 nC

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