Specification	IXFA4N100Q-TRL

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	39 nC
Input Capacitance (Ciss) (Max)	1050 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263AA (IXFA)
Power Dissipation (Max)	150 W
Rds On (Max)	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXFA4N100 Series

Part	FET Type	Package / Case	Mounting Type	Rds On (Max)	Package Name	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Input Capacitance (Ciss) (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Drain to Source Voltage (Vdss)
LITTELFUSE IXFA4N100Q-TRL	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3 Ohm	TO-263AA (IXFA)	150 W	4 A	4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1050 pF	20 V	10 V	39 nC	1000 V
LITTELFUSE IXFA4N100Q	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3 Ohm	TO-263AA (IXFA)	150 W	4 A	4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1050 pF	20 V	10 V	39 nC	1000 V
LITTELFUSE IXFA4N100Q	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3 Ohm	TO-263AA (IXFA)	150 W	4 A	4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1050 pF	20 V	10 V	39 nC	1000 V

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