Specification	IPD35N12S3L24ATMA1

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	39 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	71 W
Qualification	AEC-Q101
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.4 V

IPD35N12 Series

Part	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Mounting Type	Qualification	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Power Dissipation (Max)
INFINEON IPD35N12S3L24ATMA1	N-Channel	10 V	4.5 V	Automotive	MOSFET (Metal Oxide)	20 V	120 V	24 mOhm	PG-TO252-3	-55 °C	175 °C	39 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	2700 pF	Surface Mount	AEC-Q101	35 A	2.4 V	71 W

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