Specification	SIHU5N50D-E3

Current - Continuous Drain (Id) (Tc)	5.3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	325 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	TO-251AA
Power Dissipation (Max)	104 W
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

SIHU5 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Technology	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	FET Type
Vishay Dale SIHU5N50D-GE3	10 V	5 V	5.3 A	325 pF	MOSFET (Metal Oxide)	20 nC	104 W	1.5 Ohm	TO-251AA	-55 °C	150 °C	500 V	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	30 V	N-Channel
Vishay Dale SIHU5N50D-E3	10 V	5 V	5.3 A	325 pF	MOSFET (Metal Oxide)	20 nC	104 W	1.5 Ohm	TO-251AA	-55 °C	150 °C	500 V	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	30 V	N-Channel

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