Specification	IRF9Z24STRR

Current - Continuous Drain (Id) (Tc)	11 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	19 nC
Input Capacitance (Ciss) (Max)	570 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	60 W, 3.7 W
Rds On (Max)	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF9 Series

Part	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Package / Case	Package Name	Vgs (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Technology	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale IRF9Z24	Through Hole	60 V	280 mOhm	TO-220-3	TO-220AB	20 V	4 V	570 pF	19 nC	MOSFET (Metal Oxide)	P-Channel	60 W	10 V	-55 °C	175 °C	11 A
Vishay Dale IRF9Z24S	Surface Mount	60 V	280 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	20 V	4 V	570 pF	19 nC	MOSFET (Metal Oxide)	P-Channel	3.7 W 60 W	10 V	-55 °C	175 °C	11 A
Vishay Dale IRF9Z24STRR	Surface Mount	60 V	280 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	20 V	4 V	570 pF	19 nC	MOSFET (Metal Oxide)	P-Channel	3.7 W 60 W	10 V	-55 °C	175 °C	11 A
Vishay Dale IRF9Z34STRL	Surface Mount	60 V	140 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	20 V	4 V	1100 pF	34 nC	MOSFET (Metal Oxide)	P-Channel	3.7 W 88 W	10 V	-55 °C	175 °C	18 A
Vishay Dale IRF9Z34	Through Hole	60 V	140 mOhm	TO-220-3	TO-220AB	20 V	4 V	1100 pF	34 nC	MOSFET (Metal Oxide)	P-Channel	88 W	10 V	-55 °C	175 °C	18 A

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