Specification	SI2307CDS-T1-BE3

Current - Continuous Drain (Id) (Ta)	2.7 A
Current - Continuous Drain (Id) (Tc)	3.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	6.2 nC
Input Capacitance (Ciss) (Max)	340 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	1.8 W, 1.1 W
Rds On (Max)	88 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI2307 Series

Part	Vgs(th) (Max)	Technology	FET Type	Rds On (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Package Name	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SI2307CDS-T1-BE3	3 V	MOSFET (Metal Oxide)	P-Channel	88 mOhm	SC-59 SOT-23-3 TO-236-3	340 pF	Surface Mount	10 V	4.5 V	-55 °C	150 °C	20 V	SOT-23-3 (TO-236)	30 V	6.2 nC	1.1 W 1.8 W	3.5 A	2.7 A
Vishay Dale SI2307BDS-T1-GE3	3 V	MOSFET (Metal Oxide)	P-Channel	78 mOhm 78 mOhm	SC-59 SOT-23-3 TO-236-3	380 pF	Surface Mount			-55 °C	150 °C	20 V	SOT-23-3 (TO-236)	30 V	15 nC	750 mW		2.5 A	10 V

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