Specification	SIHK055N60EF-T1GE3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	90 nC
Input Capacitance (Ciss) (Max)	3667 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerBSFN
Package Length	10 mm
Package Name	PowerPAK®
Package Width	12 mm
Power Dissipation (Max)	236 W
Rds On (Max)	58 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

SIHK055 Series

Part	Technology	Current - Continuous Drain (Id) (Tc)	FET Type	Rds On (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Package Length	Package Width	Input Capacitance (Ciss) (Max)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIHK055N60EF-T1GE3	MOSFET (Metal Oxide)	40 A	N-Channel	58 mOhm	5 V	10 V	PowerPAK®	10 mm	12 mm	3667 pF	30 V	236 W	Surface Mount	600 V	8-PowerBSFN	90 nC	-55 °C	150 °C

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