Specification	NE85639-A

Current - Collector (Ic) (Max)	0.1 mA
DC Current Gain (hFE) (Min)	50
Frequency - Transition	9 GHz
Gain	13 dB
Mounting Type	Surface Mount
Noise Figure (Typical)	1.1 dB
Operating Temperature	150 °C
Package / Case	TO-253AA, TO-253-4
Package Name	SOT-143
Power - Max	200 mW
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

NE85639 Series

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min)	Power - Max	Noise Figure (Typical) Maximum	Noise Figure (Typical) Minimum	Operating Temperature	Gain	Transistor Type	Frequency - Transition	Package Name	Current - Collector (Ic) (Max)	Mounting Type	Noise Figure (Typical)
Renesas Electronics Corporation NE85639R-T1	SOT-143R	12 V	50	200 mW	2.1 dB	1.5 dB	150 °C	13.5 dB	NPN	9 GHz	SOT-143R	0.1 mA	Surface Mount
Renesas Electronics Corporation NE85639-T1-A	TO-253-4 TO-253AA	12 V	50	200 mW			150 °C	13 dB	NPN	7 GHz 9 GHz	SOT-143	0.1 mA	Surface Mount	1.1 dB
Renesas Electronics Corporation NE85639R-T1-A	SOT-143R	12 V	50	200 mW	2.1 dB	1.5 dB	150 °C	13.5 dB	NPN	9 GHz	SOT-143R	0.1 mA	Surface Mount
Renesas Electronics Corporation NE85639-A	TO-253-4 TO-253AA	12 V	50	200 mW			150 °C	13 dB	NPN	9 GHz	SOT-143	0.1 mA	Surface Mount	1.1 dB

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