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2N5682 TIN/LEAD

2N5682 TIN/LEAD

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Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT NPN 100VCBO 100VCEO 4.0VEBO 1.0A 1.0W

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2N5682 TIN/LEAD

2N5682 TIN/LEAD

Active
Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT NPN 100VCBO 100VCEO 4.0VEBO 1.0A 1.0W

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Description

General part information

2N5682 Series

BIPOLAR TRANSISTORS - BJT NPN 100VCBO 100VCEO 4.0VEBO 1.0A 1.0W

Technical Specifications

Parameters and characteristics for this part

Specification2N5682 TIN/LEAD
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)40
Frequency - Transition30 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Package NameTO-39
Power - Max1 VA
Transistor TypeNPN
Vce Saturation (Max)2 V
Voltage - Collector Emitter Breakdown (Max)120 V

Pricing

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