Specification	SI7772DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	35.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	28 nC
Input Capacitance (Ciss) (Max)	1084 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	29.8 W, 3.9 W
Rds On (Max)	13 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SI7772 Series

Part	Vgs(th) (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package / Case	Gate Charge (Max)	Package Name	Vgs (Max)
Vishay Dale SI7772DP-T1-GE3	2.5 V	Surface Mount	10 V	4.5 V	1084 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	3.9 W 29.8 W	N-Channel	35.6 A	13 mOhm	PowerPAK® SO-8	28 nC	PowerPAK® SO-8	20 V

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