Specification	IRFD120

Current - Continuous Drain (Id) (Ta)	1.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	16 nC
Input Capacitance (Ciss) (Max)	360 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-DIP, 4-HVMDIP
Package Width	7.62 mm
Power Dissipation (Max)	1.3 W
Rds On (Max)	270 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFD120 Series

Part	Gate Charge (Max)	Rds On (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package Width	Package Name	Package Length	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Mounting Type	Technology	Vgs (Max)
Vishay Dale IRFD120PBF	16 nC	270 mOhm	4 V	10 V	360 pF	100 V	1.3 W	7.62 mm	4-DIP 4-HVMDIP	0.3 in	1.3 A	-55 °C	175 °C	N-Channel	Through Hole	MOSFET (Metal Oxide)	20 V
Vishay Dale IRFD120	16 nC	270 mOhm	4 V	10 V	360 pF	100 V	1.3 W	7.62 mm	4-DIP 4-HVMDIP	0.3 in	1.3 A	-55 °C	175 °C	N-Channel	Through Hole	MOSFET (Metal Oxide)	20 V

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