Specification	IPD170N04NGBTMA1

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	880 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	31 W
Rds On (Max)	17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPD170N Series

Part	Power Dissipation (Max)	FET Type	Vgs (Max)	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Technology	Gate Charge (Max)	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)
INFINEON IPD170N04NGBTMA1	31 W	N-Channel	20 V	17 mOhm	PG-TO252-3	-55 °C	175 °C	4 V	40 V	880 pF	MOSFET (Metal Oxide)	11 nC	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	30 A

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