Specification	1SS372(TE85L,F)

Capacitance	20 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Package / Case	SC-70, SOT-323
Package Name	USM
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	10 V
Voltage - Forward (Vf) (Max)	500 mV

1SS372 Series

Diodes, 10 V/0.1 A Schottky Barrier Diode, SOT-323(USM)

Part	Voltage - Forward (Vf) (Max)	Mounting Type	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage	Package Name	Capacitance	Technology	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)
Toshiba Semiconductor and Storage 1SS372(TE85L,F)	500 mV	Surface Mount	100 mA	SC-70 SOT-323	20 µA	USM	20 pF	Schottky	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	10 V	125 °C

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