Specification	SIA777EDJ-T1-GE3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	4.5 A
Current - Continuous Drain (Id) (Typical)	1.5 A
Drain to Source Voltage (Vdss) (Option 1)	20 V
Drain to Source Voltage (Vdss) (Option 2)	12 V
FET Feature	Logic Level Gate
Gate Charge (Max)	2.2 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Package Name	PowerPAK® SC-70-6 Dual
Power - Max (Value 1)	5 W
Power - Max (Value 2)	7.8 W
Rds On (Max)	225 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SIA777 Series

Part	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Technology	Package / Case	Power - Max (Value 1)	Power - Max (Value 2)	Gate Charge (Max)	FET Feature	Package Name	Vgs(th) (Max)	Configuration	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss) (Option 2)	Drain to Source Voltage (Vdss) (Option 1)
Vishay Dale SIA777EDJ-T1-GE3	4.5 A	1.5 A	MOSFET (Metal Oxide)	PowerPAK® SC-70-6 Dual	5 W	7.8 W	2.2 nC	Logic Level Gate	PowerPAK® SC-70-6 Dual	1 V	N P-Channel	Surface Mount	225 mOhm	-55 °C	150 °C	12 V	20 V

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