Specification	SIHG100N60E-GE3

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	50 nC
Input Capacitance (Ciss) (Max)	1851 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AC
Power Dissipation (Max)	208 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

SIHG100 Series

Part	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Gate Charge (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package Name
Vishay Dale SIHG100N60E-GE3	1851 pF	600 V	5 V	MOSFET (Metal Oxide)	10 V	208 W	Through Hole	30 V	50 nC	TO-247-3	-55 °C	150 °C	N-Channel	30 A	100 mOhm	TO-247AC

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