TK4R3A06PL,S4X
ActiveToshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR TO-220SIS PD=36W F=1MHZ ROHS COMPLIANT: YES
TK4R3A06PL,S4X
ActiveToshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR TO-220SIS PD=36W F=1MHZ ROHS COMPLIANT: YES
Description
General part information
TK4R3A06PL Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0043 Ω@10V, TO-220SIS, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TK4R3A06PL,S4X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 68 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 48.2 nC |
| Input Capacitance (Ciss) (Max) | 3280 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 36 W |
| Rds On (Max) | 7.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Structures and Characteristics: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Maximum Ratings: Power MOSFET Application Notes
Simplified CFD Model Application Note
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Reverse Recovery Operation and Destruction of MOSFET Body Diode
TK4R3A06PL Data sheet/English
Avalanche energy calculation
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
TK4R3A06PL Data sheet/Japanese
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Motor Control (Vacuum Cleaners)
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Derating of the MOSFET Safe Operating Area
RC Snubbers for Step-Down Converters
MOSFET Self-Turn-On Phenomenon
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET SPICE model grade
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter