Specification	IXTQ102N20T

Current - Continuous Drain (Id) (Tc)	102 A
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Gate Charge (Max)	114 nC, 114 nC
Input Capacitance (Ciss) (Max)	6800 pF, 6800 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-3P-3, SC-65-3
Package Name	TO-3P
Power Dissipation (Max)	750 W
Rds On (Max)	23 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	4.5 V

IXTQ102 Series

Part	FET Type	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Mounting Type	Package Name	Gate Charge (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
LITTELFUSE IXTQ102N20T	N-Channel	750 W	MOSFET (Metal Oxide)	200 V	-55 °C	175 °C	4.5 V	SC-65-3 TO-3P-3	102 A	6800 pF 6800 pF	23 mOhm	Through Hole	TO-3P	114 nC 114 nC
LITTELFUSE IXTQ102N15T	N-Channel	455 W	MOSFET (Metal Oxide)	150 V	-55 °C	175 °C	5 V	SC-65-3 TO-3P-3	102 A	5220 pF	18 mOhm	Through Hole	TO-3P	87 nC	20 V	10 V

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