PSMN2R0-25MLDX

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Nexperia USA Inc.

N-CHANNEL 25 V, 2.1 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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PSMN2R0-25MLDX

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Nexperia USA Inc.

N-CHANNEL 25 V, 2.1 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN2R0 Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R0-25MLDX

Current - Continuous Drain (Id) (Tc)	70 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	34.4 nC
Input Capacitance (Ciss) (Max)	2490 pF, 2490 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-LFPAK33 (5-Lead), SOT-1210
Package Name	LFPAK33
Power Dissipation (Max)	74 W
Rds On (Max)	2.27 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

PSMN2R0 Series

N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Package Name	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Mounting Type	Package / Case	Rds On (Max)	FET Feature	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN2R0-25YLDX	10 V	4.5 V	2.2 V	LFPAK56 Power-SO8	34.1 nC	115 W	-55 °C	175 °C	MOSFET (Metal Oxide)	100 A	20 V	Surface Mount	SC-100 SOT-669	2.09 mOhm	Schottky Diode (Body)	N-Channel	25 V	2485 pF
Nexperia USA Inc. PSMN2R0-30YLE,115	10 V	4.5 V	2.15 V	LFPAK56 Power-SO8	87 nC	272 W	-55 °C	175 °C	MOSFET (Metal Oxide)	100 A	20 V	Surface Mount	SC-100 SOT-669	2 mOhm		N-Channel	30 V	5217 pF
Nexperia USA Inc. PSMN2R0-40YLDX	10 V	4.5 V	2.05 V	LFPAK56 Power-SO8	92 nC	166 W	-55 °C	175 °C	MOSFET (Metal Oxide)	180 A	20 V	Surface Mount	SC-100 SOT-669	2.1 mOhm	Schottky Diode (Body)	N-Channel	40 V	6581 pF
Nexperia USA Inc. PSMN2R0-60ES,127			4 V	I2PAK	137 nC	338 W	-55 °C	175 °C	MOSFET (Metal Oxide)	120 A	20 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	2.2 mOhm		N-Channel	60 V	9997 pF	10 V
Nexperia USA Inc. PSMN2R0-25MLDX	10 V	4.5 V	2.2 V	LFPAK33	34.4 nC	74 W	-55 °C	175 °C	MOSFET (Metal Oxide)	70 A	20 V	Surface Mount	8-LFPAK33 (5-Lead) SOT-1210	2.27 mOhm	Schottky Diode (Body)	N-Channel	25 V	2490 pF 2490 pF
Nexperia USA Inc. PSMN2R0-60PSRQ			4 V	TO-220AB	192 nC	338 W	-55 °C	175 °C	MOSFET (Metal Oxide)	120 A	20 V	Through Hole	TO-220-3	2.2 mOhm		N-Channel	60 V	13500 pF	10 V
Nexperia USA Inc. PSMN2R0-30BL,118	10 V	4.5 V	2.15 V	D2PAK	117 nC	211 W	-55 °C	175 °C	MOSFET (Metal Oxide)	100 A	20 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.1 mOhm		N-Channel	30 V	6810 pF
Nexperia USA Inc. PSMN2R0-60PS,127			4 V	TO-220AB	137 nC	338 W	-55 °C	175 °C	MOSFET (Metal Oxide)	120 A	20 V	Through Hole	TO-220-3	2.2 mOhm		N-Channel	60 V	9997 pF	10 V