Specification	SIAA00DJ-T1-GE3

Current - Continuous Drain (Id) (Ta)	20.1 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Input Capacitance (Ciss) (Max)	1090 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19.2 W
Rds On (Max)	5.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-12 V
Vgs (Max) Positive	16 V
Vgs(th) (Max)	2.5 V

SIAA00 Series

Part	Drain to Source Voltage (Vdss)	Package Name	Mounting Type	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Power Dissipation (Max)	Vgs(th) (Max)
Vishay Dale SIAA00DJ-T1-GE3	25 V	PowerPAK® SC-70-6	Surface Mount	PowerPAK® SC-70-6	-12 V	16 V	10 V	4.5 V	MOSFET (Metal Oxide)	1090 pF	20.1 A	N-Channel	5.6 mOhm	-55 °C	150 °C	24 nC 24 nC	3.5 W 19.2 W	2.5 V

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