Specification	AUIRS2118STR

Channel Type	Single
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	High-Side
Fall Time (Typ)	25 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
Grade	Automotive
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Qualification	AEC-Q100
Rise Time (Typ)	75 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

AUIRS2118 Series

Part	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	High Side Voltage - Max (Bootstrap)	Driven Configuration	Package Length	Package Name	Package Width	Input Type	Rise Time (Typ)	Fall Time (Typ)	Number of Drivers	Mounting Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Gate Channel	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Channel Type	Qualification	Logic Voltage - VIH	Logic Voltage - VIL
INFINEON AUIRS2118S	10 VDC	20 V	600 V	High-Side	0.154 in	8-SOIC	3.9 mm	Inverting	75 ns	25 ns	1	Surface Mount	600 mA	290 mA	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Automotive	Single	AEC-Q100	9.5 V	6 V
INFINEON AUIRS2118STR	10 VDC	20 V	600 V	High-Side	0.154 in	8-SOIC	3.9 mm	Inverting	75 ns	25 ns	1	Surface Mount	600 mA	290 mA	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Automotive	Single	AEC-Q100	9.5 V	6 V

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