Specification	SQJ262EP-T1_GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	15 A
Current - Continuous Drain (Id) (Tc) (2)	40 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	23 nC, 10 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1260 pF, 550 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Package Name	PowerPAK® SO-8 Dual Asymmetric
Power - Max (Tc)	27 W, 48 W
Qualification	AEC-Q101
Rds On (Max)	35.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SQJ262 Series

Part	Channel Count	Configuration	Configuration - Features	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Input Capacitance (Ciss) (Max)	Rds On (Max)	Grade	Power - Max (Tc)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc) (2)	Current - Continuous Drain (Id) (Tc)	Package Name	Technology	Package / Case	Vgs(th) (Max)	Gate Charge (Max)
Vishay Dale SQJ262EP-T1_GE3	2	N-Channel	Dual	Surface Mount	-55 °C	175 °C	AEC-Q101	550 pF 1260 pF	35.5 mOhm	Automotive	27 W 48 W	60 V	40 A	15 A	PowerPAK® SO-8 Dual Asymmetric	MOSFET (Metal Oxide)	PowerPAK® SO-8 Dual	2.5 V	10 nC 23 nC

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