Specification	SIHH27N60EF-T1-GE3

Current - Continuous Drain (Id) (Tc)	29 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	135 nC, 135 nC
Input Capacitance (Ciss) (Max)	2609 pF, 2609 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	202 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHH27 Series

Part	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Mounting Type	Rds On (Max)	Package Width	Package Name	Package Length	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SIHH27N60EF-T1-GE3	4 V	N-Channel	2609 pF 2609 pF	135 nC 135 nC	202 W	Surface Mount	100 mOhm	8 mm	PowerPAK®	8 mm	MOSFET (Metal Oxide)	8-PowerTDFN	10 V	-55 °C	150 °C	600 V	30 V	29 A

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