Specification	IPD26N06S2L35ATMA1

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	621 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3-11
Power Dissipation (Max)	68 W
Qualification	AEC-Q101
Rds On (Max)	35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

IPD26N Series

Part	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade	Vgs (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Technology	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Package Name	Power Dissipation (Max)	Qualification
INFINEON IPD26N06S2L35ATMA1	35 mOhm	30 A	10 V	4.5 V	Automotive	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 °C	N-Channel	55 V	24 nC 24 nC	MOSFET (Metal Oxide)	2 V	621 pF	Surface Mount	PG-TO252-3-11	68 W	AEC-Q101

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