Specification	SSM6K504NU,LF

Current - Continuous Drain (Id) (Ta)	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	4.8 nC
Input Capacitance (Ciss) (Max)	620 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-WDFN Exposed Pad
Package Length	2 mm
Package Name	6-UDFNB
Package Width	2 mm
Power Dissipation (Max)	1.25 W
Rds On (Max)	19.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SSM6K504NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 9.0 A, 0.0195 Ω@10V, SOT-1220(UDFN6B)

Part	Vgs(th) (Max)	Package Name	Package Length	Package Width	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Rds On (Max)	Technology	FET Type	Input Capacitance (Ciss) (Max)	Package / Case	Gate Charge (Max)
Toshiba Semiconductor and Storage SSM6K504NU,LF	2.5 V	6-UDFNB	2 mm	2 mm	1.25 W	20 V	30 V	150 °C	9 A	10 V	4.5 V	Surface Mount	19.5 mOhm	MOSFET (Metal Oxide)	N-Channel	620 pF	6-WDFN Exposed Pad	4.8 nC

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