Specification	SI2328DS-T1-GE3

Current - Continuous Drain (Id) (Ta)	1.15 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	5 nC, 5 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	730 mW
Rds On (Max)	250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI2328 Series

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package Name	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Mounting Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Vgs (Max)
Vishay Dale SI2328DS-T1-E3	730 mW	10 V	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	-55 °C	150 °C	4 V	Surface Mount	250 mOhm	100 V	5 nC 5 nC	1.15 A	N-Channel	20 V
Vishay Dale SI2328DS-T1-GE3	730 mW	10 V	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	-55 °C	150 °C	4 V	Surface Mount	250 mOhm	100 V	5 nC 5 nC	1.15 A	N-Channel	20 V

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