Description
General part information
BSC110 Series
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on)(up to 25 percent compared to the next best alternative in SuperSO8) and Qrrwithout compromising FOMgdand FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Qrr= 26 nC in SuperSO8) increases commutation ruggedness.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC110N15NS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 76 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 35 nC |
| Input Capacitance (Ciss) (Max) | 2770 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-7 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) | 11 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.6 V |
Pricing
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