PSMN2R1-30YLEX

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Nexperia USA Inc.

MOSFETS N-CHANNEL 25 V, 2.4 MÂ„¦ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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PSMN2R1-30YLEX

Active

Nexperia USA Inc.

MOSFETS N-CHANNEL 25 V, 2.4 MÂ„¦ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN2R1-30YLE Series

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R1-30YLEX

Current - Continuous Drain (Id) (Tc)	160 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	7 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	64 nC
Input Capacitance (Ciss) (Max)	3749 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	124 W
Rds On (Max)	2.17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

PSMN2R1-30YLE Series

N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Part	Vgs(th) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Technology	Vgs (Max)	Gate Charge (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Package Name
Nexperia USA Inc. PSMN2R1-30YLEX	2.2 V	N-Channel	160 A	MOSFET (Metal Oxide)	20 V	64 nC	2.17 mOhm	10 V	7 V	SC-100 SOT-669	3749 pF	30 V	Surface Mount	-55 °C	175 °C	124 W	LFPAK56 Power-SO8