Specification	IRF6617TRPBF

Current - Continuous Drain (Id) (Ta)	14 A
Current - Continuous Drain (Id) (Tc)	55 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	17 nC, 17 nC
Input Capacitance (Ciss) (Max)	1300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	DirectFET™ Isometric ST
Package Name	DIRECTFET™ ST
Power Dissipation (Max)	2.1 W, 42 W
Rds On (Max)	8.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.35 V

IRF6617 Series

Part	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Power Dissipation (Max)	FET Type	Mounting Type	Package Name	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)
INFINEON IRF6617TRPBF	2.35 V	-40 °C	150 °C	10 V	4.5 V	30 V	MOSFET (Metal Oxide)	DirectFET™ Isometric ST	2.1 W 42 W	N-Channel	Surface Mount	DIRECTFET™ ST	14 A	55 A	17 nC 17 nC	8.1 mOhm	1300 pF	20 V

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